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this is information on a product in full production. february 2014 docid024735 rev 2 1/21 STB18N60M2, stp18n60m2, stw18n60m2 n-channel 600 v, 0.255 typ., 13 a mdmesh ii plus? low q g power mosfet in d 2 pak, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications ? llc converters, resonant converters description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. am15572v1 , tab to-220 to-247 d pak 1 2 3 tab 1 2 3 2 1 3 tab order codes v ds @ t jmax r ds(on) max i d STB18N60M2 650 v 0.28 13 a stp18n60m2 stw18n60m2 table 1. device summary order codes marking package packaging STB18N60M2 18n60m2 d 2 pak tape and reel stp18n60m2 to-220 tube stw18n60m2 to-247 www.st.com
contents STB18N60M2, stp18n60m2, stw18n60m2 2/21 docid024735 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid024735 rev 2 3/21 STB18N60M2, stp18n60m2, stw18n60m2 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 13 a i d drain current (continuous) at t c = 100 c 8 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 52 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) 2. i sd 13 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit d 2 pak to-220 to-247 r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board thermal resistance junction-pcb max 30 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 135 mj
electrical characteristics STB18N60M2, stp18n60m2, stw18n60m2 4/21 docid024735 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6.5 a 0.255 0.28 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 791 - pf c oss output capacitance - 40 - pf c rss reverse transfer capacitance -5.6-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 164.5 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 5.6 - q g total gate charge v dd = 480 v, i d = 13 a, v gs = 10 v (see figure 16 ) -21.5-nc q gs gate-source charge - 3.2 - nc q gd gate-drain charge - 11.3 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d (on) turn-on delay time v dd = 300 v, i d = 6.5 a, r g = 4.7 , v gs = 10 v (see figure 15 and figure 20 ) -12-ns t r rise time - 9 - ns t d (off) turn-off delay time - 47 - ns t f fall time - 10.6 - ns
docid024735 rev 2 5/21 STB18N60M2, stp18n60m2, stw18n60m2 electrical characteristics 21 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 13 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 52 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 13 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 13 a, di/dt = 100 a/ s v dd = 60 v (see figure 17 ) -305 ns q rr reverse recovery charge - 3.3 c i rrm reverse recovery current - 22 a t rr reverse recovery time i sd = 13 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 17 ) -417 ns q rr reverse recovery charge - 4.6 c i rrm reverse recovery current - 22 a
electrical characteristics STB18N60M2, stp18n60m2, stw18n60m2 6/21 docid024735 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance for d 2 pak, to-220 and to-247 figure 4. safe operating area for to-247 figure 5. output characteristics i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15835v1 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15836v1 i d 15 10 5 0 0 10 v ds (v) (a) 5 15 20 4v 5v 6v v gs =7, 8, 9, 10v 20 25 30 am15837v1 figure 6. transfer characteristics figure 7. gate charge vs gate-source voltage i d 10 0 0 4 v gs (v) 8 (a) 2 6 20 30 v ds =18v 10 5 15 25 am15838v1 vds v gs 6 4 2 0 0 q g (nc) (v) 5 8 10 v dd =480v 300 200 100 0 400 v ds 10 500 v ds (v) i d =13a 15 20 25 12 am15839v1
docid024735 rev 2 7/21 STB18N60M2, stp18n60m2, stw18n60m2 electrical characteristics 21 figure 8. static drain-source on-resistance figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature r ds(on) 0.260 0.255 0.250 0.245 0 2 i d (a) ( ) 0.265 4 v gs =10v 0.270 6 8 10 12 am15840v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15841v1 v gs(th) 0.8 0.7 t j (c) (norm) -50 0.9 -25 50 100 0 25 75 125 1.0 1.1 id=250 a am15828v1 r ds(on) 1.3 1.1 0.9 0.7 t j (c) (norm) 0.5 -50 -25 0 25 i d =6.5 a 50 75 100 125 1.5 1.7 1.9 2.1 2.3 2.5 v gs =10v am15829v1 v sd 0 2 i sd (a) (v) 4 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 6 1 1.2 1.4 8 10 12 am15842v1 v (br)dss 0.99 0.97 0.95 0.93 t j (c) (norm) -50 1.01 i d =1ma -25 50 100 1.03 0 25 75 125 1.05 1.07 1.09 1.11 am15831v1
electrical characteristics STB18N60M2, stp18n60m2, stw18n60m2 8/21 docid024735 rev 2 figure 14. output capacitance stored energy eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 300 400 600 4 5 6 am15843v1
docid024735 rev 2 9/21 STB18N60M2, stp18n60m2, stw18n60m2 test circuits 21 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB18N60M2, stp18n60m2, stw18n60m2 10/21 docid024735 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024735 rev 2 11/21 STB18N60M2, stp18n60m2, stw18n60m2 package mechanical data 21 figure 21. d2pak (to-263) drawing 0079457_t
package mechanical data STB18N60M2, stp18n60m2, stw18n60m2 12/21 docid024735 rev 2 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid024735 rev 2 13/21 STB18N60M2, stp18n60m2, stw18n60m2 package mechanical data 21 figure 22. d2pak footprint (a) a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
package mechanical data STB18N60M2, stp18n60m2, stw18n60m2 14/21 docid024735 rev 2 figure 23. to-220 type a drawing bw\sh$b5hyb7
docid024735 rev 2 15/21 STB18N60M2, stp18n60m2, stw18n60m2 package mechanical data 21 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STB18N60M2, stp18n60m2, stw18n60m2 16/21 docid024735 rev 2 figure 24. to-247 drawing 0075325_g
docid024735 rev 2 17/21 STB18N60M2, stp18n60m2, stw18n60m2 package mechanical data 21 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
packaging mechanical data STB18N60M2, stp18n60m2, stw18n60m2 18/21 docid024735 rev 2 5 packaging mechanical data figure 25. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid024735 rev 2 19/21 STB18N60M2, stp18n60m2, stw18n60m2 packaging mechanical data 21 figure 26. reel table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB18N60M2, stp18n60m2, stw18n60m2 20/21 docid024735 rev 2 6 revision history table 13. document revision history date revision changes 05-jun-2013 1 first release. 28-feb-2014 2 ? modified: note 1 in table 2 ?r thj-case value in table 3 ? minor text changes
docid024735 rev 2 21/21 STB18N60M2, stp18n60m2, stw18n60m2 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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